Analog Power
AMA423P
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
Key Features:
rDS(on) (mΩ)
VDS (V)
-20
ID(A)
-6.6
-5.7
-1
• Low rDS(on) trench technology
• Low thermal impedance
• 2mm x 2mm footprint DFN package
• RDS rated at 1.8V Gate-drive
42 @ VGS = -4.5V
57 @ VGS = -2.5V
86 @ VGS = -1.8V
DFN2x2-8
Typical Applications:
• Battery Powered Instruments
• Portable Computing
• Mobile Phones
• GPS Units and Media Players
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
VDS
Limit
-20
Units
Drain-Source Voltage
Gate-Source Voltage
V
VGS
±8
TA=25°C
TA=70°C
-6.6
-5.3
-20
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
ID
A
IDM
IS
4
A
TA=25°C
TA=70°C
3
Power Dissipation a
PD
W
°C
1.92
-55 to 150
Operating Junction and Storage Temperature Range
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter
Symbol Maximum
Units
t <= 5 sec
Steady State
40
Maximum Junction-to-Ambient a
°C/W
RθJA
90
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS-AMA423P-2010-rev4