Analog Power
AM9433P
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
44 @ VGS = -4.5V
ID (A)
-8.3
68 @ VGS = -2.5V
-20
-6.7
150 @ VGS = -1.8V
-4.5
•
•
Low rDS(on) provides higher efficiency and
extends battery life
1
2
8
7
6
5
Low thermal impedance copper leadframe
SOIC-8 saves board space
3
4
•
•
Fast switching speed
High performance trench technology
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
-20
12
V
TA=25oC
TA=70oC
-8.3
-6.7
50
Continuous Drain Currenta
Pulsed Drain Currentb
ID
A
IDM
IS
Continuous Source Current (Diode Conduction)a
A
W
oC
-2.1
3.1
2.0
TA=25oC
TA=70oC
Power Dissipationa
PD
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Units
oC/W
oC/W
Maximum
t <= 10 sec
Steady-State
40
Maximum Junction-to-Ambienta
RθJA
70
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
1
Publication Order Number:
DS-AM9433_G
PRELIMINARY
ANALOGPOWER [ ANALOG POWER ]
