Analog Power
AM90N06-10PCFM
N-Channel 60-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
ID (A)
9.9 @ VGS = 10V
13 @ VGS = 4.5V
90a
60
D1
TO-220CFM
•
•
Low rDS(on) provides higher efficiency and
extends battery life
G1
Low thermal impedance copper leadframe
TO-220 saves board space
S1
N-Channel MOSFET
•
•
Fast switching speed
High performance trench technology
ABSOLUTEMAXIMUMRATINGS(TA =25oCUNLESSOTHERWISENOTED)
Parameter Symbol Limit Units
Drain-SourceVoltage
VDS
VGS
ID
60
20
V
A
Gate-SourceVoltage
ContinuousDrainCurrenta
PulsedDrainCurrentb
o
T =25 C
90
240
90
C
IDM
IS
ContinuousSourceCurrent(DiodeConduction)a
A
W
oC
a
o
T =25 C
PD
Power Dissipation
300
C
OperatingJunctionandStorageTemperatureRange
T,T -55to175
J stg
THERMALRESISTANCERATINGS
Parameter
Symbol Maximum Units
MaximumJunction-to-Ambienta
oC/W
oC/W
R
62.5
0.5
θJA
MaximumJunction-to-Case
R
θJC
Notes
a.
b.
Package Limited
Pulse width limited by maximum junction temperature
1
Publication Order Number:
DS-AM90N06-10PCFM_A
PRELIMINARY
ANALOGPOWER [ ANALOG POWER ]
