Analog Power
AM7382N
N-Channel 80-V (D-S) MOSFET
PRODUCT SUMMARY
Key Features:
rDS(on) (mΩ)
VDS (V)
80
ID (A)
9.7
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
25 @ VGS = 10V
28 @ VGS = 4.5V
9.2
Typical Applications:
DFN3x3-8L
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
VDS
Limit
80
Units
Drain-Source Voltage
Gate-Source Voltage
V
VGS
±20
9.7
TA=25°C
TA=70°C
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
ID
A
7.4
IDM
IS
40
4.9
A
TA=25°C
TA=70°C
3.5
Power Dissipation a
PD
W
°C
2
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol Maximum Units
t <= 10 sec
Steady State
35
Maximum Junction-to-Ambient a
°C/W
RθJA
81
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS_AM7382N_1A