Analog Power
AM7101P
P-Channel 100-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
ID (A)
-3
269 @ VGS = -10V
289 @ VGS = -5.5V
-100
-2.9
DFN3x3-8PP
Top View
S
•
•
Low rDS(on) provides higher efficiency and
extends battery life
8
7
6
5
D
D
D
D
S
S
S
G
1
2
3
4
G
Low thermal impedance copper leadframe
DFN3x3-8PP saves board space
•
•
Fast switching speed
D
High performance trench technology
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
-100
20
V
TA=25oC
TA=70oC
-3
-2.5
50
Continuous Drain Currenta
ID
A
Pulsed Drain Currentb
IDM
IS
Continuous Source Current (Diode Conduction)a
Power Dissipationa
-2.1
3.5
2.0
A
TA=25oC
TA=70oC
PD
W
oC
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
THERMALRESISTANCERATINGS
Parameter
Symbol Maximum Units
35
81
oC/W
oC/W
t<=10sec
MaximumJunction-to-Ambienta
R
θJA
SteadyState
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
1
Publication Order Number:
DS-AM7101_A
PRELIMINARY
ANALOGPOWER [ ANALOG POWER ]
