Analog Power
AM70N15-40P
N-Channel 150-V (D-S) MOSFET
PRODUCT SUMMARY
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
VDS (V)
rDS(on) m(Ω)
48 @ VGS = 10V
ID (A)
65a
150
54 @ VGS = 4.5V
D1
•
•
Low rDS(on) provides higher efficiency and
extends battery life
G1
Low thermal impedance copper leadframe
TO-220 saves board space
S1
N-Channel MOSFET
•
•
Fast switching speed
High performance trench technology
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
VDS
Limit
150
Units
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
Continuous Drain Currenta
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Power Dissipationa
TC=25oC
TC=25oC
65
ID
A
IDM
IS
390
110
300
A
PD
W
oC
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 175
THERMALRESISTANCERATINGS
Parameter
Symbol Maximum Units
MaximumJunction-to-Ambienta
oC/W
oC/W
R
62.5
0.5
θJA
MaximumJunction-to-Case
R
θJC
Notes
a.
b.
Package Limited
Pulse width limited by maximum junction temperature
1
Publication Order Number:
DS-AM70N15-40_A
PRELIMINARY
ANALOGPOWER [ ANALOG POWER ]
