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AM6612NE 参数 Datasheet PDF下载

AM6612NE图片预览
型号: AM6612NE
PDF下载: 下载PDF文件 查看货源
内容描述: N通道30 -V (D -S )的MOSFET [N-Channel 30-V (D-S) MOSFET]
分类和应用:
文件页数/大小: 3 页 / 206 K
品牌: ANALOGPOWER [ ANALOG POWER ]
 浏览型号AM6612NE的Datasheet PDF文件第2页浏览型号AM6612NE的Datasheet PDF文件第3页  
Analog Power  
AM6612NE  
N-Channel 30-V (D-S) MOSFET  
These miniature surface mount MOSFETs utilize a  
high cell density trench process to provide low  
rDS(on) and to ensure minimal power loss and heat  
dissipation. Typical applications are DC-DC  
converters and power management in portable and  
battery-powered products such as computers,  
printers, PCMCIA cards, cellular and cordless  
telephones.  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) m()  
22 @ VGS = 10V  
30 @ VGS = 4.5V  
ID (A)  
9.4  
7.0  
30  
SOIC-8  
D
Top View  
Low rDS(on) provides higher efficiency and  
extends battery life  
Low thermal impedance copper leadframe  
SOIC-8 saves board space  
G
8
7
6
5
D
D
D
D
S
1
S
S
G
2
3
4
Fast switching speed  
S
High performance trench technology  
N-Channel  
ESD Protected  
2000V  
MOSFET  
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)  
Parameter Symbol Maximum Units  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
30  
±20  
V
TA=25oC  
TA=70oC  
9.4  
7.4  
±30  
1.6  
3.1  
2
Continuous Drain Currenta  
Pulsed Drain Currentb  
ID  
A
IDM  
IS  
Continuous Source Current (Diode Conduction)a  
Power Dissipationa  
A
TA=25oC  
TA=70oC  
PD  
W
oC  
Operating Junction and Storage Temperature Range  
TJ, Tstg -55 to 150  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambienta  
Symbol  
RθJA  
Maximum Units  
oC/W  
oC/W  
t <= 10 sec  
Steady State  
50  
92  
Notes  
a.  
b.  
Surface Mounted on 1” x 1” FR4 Board.  
Pulse width limited by maximum junction temperature  
1
Publication Order Number:  
DS-AM6612NE_A  
PRELIMINARY