Analog Power
AM6612NE
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
22 @ VGS = 10V
30 @ VGS = 4.5V
ID (A)
9.4
7.0
30
SOIC-8
D
Top View
•
•
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOIC-8 saves board space
G
8
7
6
5
D
D
D
D
S
1
S
S
G
2
3
4
•
•
Fast switching speed
S
High performance trench technology
N-Channel
ESD Protected
2000V
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
±20
V
TA=25oC
TA=70oC
9.4
7.4
±30
1.6
3.1
2
Continuous Drain Currenta
Pulsed Drain Currentb
ID
A
IDM
IS
Continuous Source Current (Diode Conduction)a
Power Dissipationa
A
TA=25oC
TA=70oC
PD
W
oC
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Symbol
RθJA
Maximum Units
oC/W
oC/W
t <= 10 sec
Steady State
50
92
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
1
Publication Order Number:
DS-AM6612NE_A
PRELIMINARY
ANALOGPOWER [ ANALOG POWER ]
