Analog Power
AM5932N
Dual N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
ID (A)
35 @ VGS = 10V
6.4
30
45 @ VGS = 4.5V
5.6
CF1206-8
Top View
D1
D2
•
•
Low rDS(on) provides higher efficiency and
extends battery life
8
7
6
5
S1
G1
S2
G2
1
2
3
4
D1
G1
G2
D1
D2
D2
Low thermal impedance copper leadframe
DFN2x3 saves board space
S1
S2
N-Channel MOSFET N-Channel MOSFET
•
•
Fast switching speed
High performance trench technology
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
VDS
Limit
30
Units
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
TA=25oC
TA=70oC
6.4
5.2
30
Continuous Drain Currenta
ID
A
Pulsed Drain Currentb
IDM
IS
Continuous Source Current (Diode Conduction)a
Power Dissipationa
1.7
2.1
1.3
A
TA=25oC
TA=70oC
PD
W
oC
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJA
Maximum Units
oC/W
t <= 10 sec
Steady State
62.5
oC/W
80
Maximum Junction-to-Ambienta
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
1
Publication Order Number:
DS-AM5932_A
PRELIMINARY
ANALOGPOWER [ ANALOG POWER ]
