Analog Power
AM4892N
Dual N-Channel 150-V (D-S) MOSFET
PRODUCT SUMMARY
Key Features:
rDS(on) (mΩ)
VDS (V)
150
ID(A)
2.3
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
255 @ VGS = 10V
290 @ VGS = 4.5V
2.2
Typical Applications:
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
VDS
Limit
150
Units
Drain-Source Voltage
Gate-Source Voltage
V
VGS
±20
TA=25°C
TA=70°C
2.3
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
ID
A
1.8
IDM
IS
10
2.8
A
TA=25°C
TA=70°C
2.1
Power Dissipation a
PD
W
°C
1.3
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol Maximum
Units
t <= 10 sec
Steady State
62.5
RθJA
Maximum Junction-to-Ambient a
°C/W
110
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS_AM4892N_1A