Analog Power
AM4825P
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
ID (A)
-11.5
-9.3
13 @ VGS = -10V
-30
19 @ VGS = -4.5V
•
•
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOIC-8 saves board space
Fast switching speed
High performance trench technology
1
2
8
7
6
5
3
4
•
•
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
-30
±25
V
TA=25oC
TA=70oC
-11.5
-9.3
±50
-2.1
3.1
Continuous Drain Currenta
Pulsed Drain Currentb
ID
A
IDM
IS
Continuous Source Current (Diode Conduction)a
Power Dissipationa
A
TA=25oC
TA=70oC
PD
W
2.3
oC
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJC
RθJA
Maximum
Units
oC/W
Maximum Junction-to-Casea
t <= 5 sec
25
Maximum Junction-to-Ambienta
t <= 5 sec
50
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
1
Publication Order Number:
DS-AM4825_G
PRELIMINARY
ANALOGPOWER [ ANALOG POWER ]
