Analog Power
AM4811P
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
ID (A)
9.5
7.5
30 @ VGS = -10V
-30
52 @ VGS = -4.5V
•
•
Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
Miniature SO-8 Surface Mount Package
Saves Board Space
High power and current handling capability
Extended VGS range (±25) for battery pack
applications
1
2
8
7
6
5
3
4
•
•
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
-30
±25
V
TA=25oC
TA=70oC
9.5
8.3
±50
-2.1
3.1
Continuous Drain Currenta
Pulsed Drain Currentb
ID
A
IDM
IS
Continuous Source Current (Diode Conduction)a
Power Dissipationa
A
TA=25oC
TA=70oC
PD
W
2.6
oC
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJC
RθJA
Maximum Units
Maximum Junction-to-Casea
oC/W
25
t <= 5 sec
Maximum Junction-to-Ambienta
t <= 10 sec
50
oC/W
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
1
Publication Order Number:
DS-AM4811_A
September, 2002 - Rev. A
PRELIMINARY
ANALOGPOWER [ ANALOG POWER ]
