Analog Power
AM4536C
P & N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
ID (A)
5.8
42 @ VGS = 4.5V
28 @ VGS = 10V
59 @ VGS = -4.5V
39 @ VGS = -10V
30
7.1
-4.9
-6.0
-30
•
•
Low rDS(on) provides higher efficiency and
extends battery life
1
2
8
7
Low thermal impedance copper leadframe
SOIC-8 saves board space
•
•
Fast switching speed
3
6
5
High performance trench technology
4
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter Symbol N-Channel P-Channel Units
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
20
-30
20
V
A
TA=25oC
TA=70oC
-6.0
-4.9
-20
-1.3
2.1
7.1
Continuous Drain Currenta
ID
5.8
20
Pulsed Drain Currentb
IDM
IS
Continuous Source Current (Diode Conduction)a
TA=25oC
1.3
2.1
A
Power Dissipationa
PD
W
TA=70oC
1.3
1.3
oC
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJA
Maximum Units
oC/W
t <= 10 sec
Steady State
62.5
oC/W
110
Maximum Junction-to-Ambienta
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
1
Publication Order Number:
DS-AM4536_A
PRELIMINARY
ANALOGPOWER [ ANALOG POWER ]
