Analog Power
AM4512CE
P & N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
40 @ VGS = 4.5V
31 @ VGS = 10V
ID (A)
6.0
6.9
-4.2
-5.2
30
80 @ VGS = -4.5V
52 @ VGS = -10V
-30
•
•
Low rDS(on) provides higher efficiency and
D1
SOIC-8
S2
extends battery life
Low thermal impedance copper leadframe
SOIC-8 saves board space
Top View
8
7
6
5
D1
D1
D2
D2
S1
G1
S2
G2
1
2
3
4
G1
G2
•
•
Fast switching speed
S1
N-Channel MOSFET
D2
P-Channel MOSFET
High performance trench technology
ESD Protected
2000V
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter Symbol N-Channel P-Channel Units
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
±20
6.9
-30
±20
V
TA=25oC
TA=70oC
-5.2
-6.8
-20
-1.3
2.1
Continuous Drain Currenta
Pulsed Drain Currentb
ID
A
5.4
20
1.3
2.1
IDM
IS
Continuous Source Current (Diode Conduction)a
A
TA=25oC
Power Dissipationa
PD
W
TA=70oC
1.3
1.3
oC
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol Maximum Units
Maximum Junction-to-Casea
oC/W
oC/W
RθJC
RθJA
t <= 5 sec
40
Maximum Junction-to-Ambienta
t <= 5 sec
60
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
1
Publication Order Number:
DS-AM4512CE_A
PRELIMINARY
ANALOGPOWER [ ANALOG POWER ]
