Analog Power
AM4463P
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low rDS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
ID (A)
-11.5
-10
13 @ VGS = -4.5V
19 @ VGS = -2.5V
35 @ VGS = -1.8V
-20
-7.7
•
•
•
Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
1
2
8
7
6
5
Miniature SO-8 Surface Mount Package Saves
Board Space
3
4
High power and current handling capability
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
-20
V
±12
TA=25oC
TA=70oC
-13.4
-8.4
±50
-2.1
3.1
Continuous Drain Currenta
ID
A
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Power Dissipationa
IDM
IS
A
TA=25oC
TA=70oC
PD
W
2.0
oC
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJC
Maximum
Units
oC/W
oC/W
Maximum Junction-to-Casea
25
t <= 5 sec
Maximum Junction-to-Ambienta
t <= 5 sec
40
RθJA
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
1
Publication Order Number:
DS-AM4463_C
January, 2004 - Rev. A
PRELIMINARY
ANALOGPOWER [ ANALOG POWER ]
