Analog Power
AM3932N
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
ID (A)
3.5
3.0
63 @ VGS = 4.5V
30
110 @ VGS = 2.5V
•
•
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
TSOP-6 saves board space
Fast switching speed
High performance trench technology
1
2
3
6
5
4
•
•
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter
Symbol
VDS
VGS
Limit
30
±12
3.5
2.8
16
1.25
1.3
0.8
Units
Drain-Source Voltage
Gate-Source Voltage
V
TA=25oC
TA=70oC
Continuous Drain Currenta
Pulsed Drain Currentb
ID
A
IDM
IS
Continuous Source Current (Diode Conduction)a
Power Dissipationa
A
TA=25oC
TA=70oC
PD
W
oC
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RθJA
Maximum Units
oC/W
100
t <= 10 sec
Steady-State
Maximum Junction-to-Ambienta
166
oC/W
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
1
Publication Order Number:
DS-AM3932_I
May, 2006
PRELIMINARY