Analog Power
AM3456N
N-Channel 30V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize High Cell Density process. Low rDS(on)
assures minimal power loss and conserves
energy, making this device ideal for use in
power management circuitry. Typical
applications are power switch, power
management in portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
Low rDS(on) Provides Higher Efficiency and
Extends Battery Life
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
ID (A)
5.1
0.044 @ VGS = 10 V
0.064 @ VGS = 4.5V
30
4.5
1
2
3
6
5
4
•
•
•
•
Low Gate Charge
Fast Switch
Miniature TSOP-6 Surface Mount Package
Saves Board Space
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
V
±20
TA=25oC
TA=70oC
5.5
4.4
±20
1.3
2.0
1.3
Continuous Drain Currenta
ID
A
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Power Dissipationa
IDM
IS
A
TA=25oC
TA=70oC
PD
W
oC
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol Maximum Units
85
62.5
t <= 5 sec
Steady-State
Maximum Junction-to-Ambienta
oC/W
RTHJA
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
1
Publication Order Number:
DS-AM3456_B
November, 2003 - Rev. A
PRELIMINARY
ANALOGPOWER [ ANALOG POWER ]
