Analog Power
AM3443P
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
rDS(on)m(OHM)
V (V)
DS
ID(A)
-4.5
65 @ V = -4.5V
GS
-20
100 @ V = -2.5V
GS
-4.2
150 @ V = -1.8V
GS
-3.1
•
•
Low rDS(on) provides higher efficiency and
extends battery life
1
2
3
6
5
4
Low thermal impedance copper leadframe
TSOP-6 saves board space
•
•
Fast switching speed
High performance trench technology
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
-20
V
±12
TA=25oC
TA=70oC
-4.5
-3.6
±20
-1.7
2.0
Continuous Drain Currenta
ID
A
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Power Dissipationa
IDM
IS
A
TA=25oC
TA=70oC
PD
W
1.3
oC
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Units
Maximum
oC/W
oC/W
62.5
Maximum Junction-to-Ambienta
t <= 5 sec
R?JA
110
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
1
Publication Order Number:
DS-AM3443_G
PRELIMINARY
ANALOGPOWER [ ANALOG POWER ]
