Analog Power
AM30N10-70D
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
Key Features:
rDS(on) (mꢁ)
V
DS (V)
ID(A)
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
78 @ VGS = 10V
92 @ VGS = 4.5V
21
19
100
Typical Applications:
• PoE Power Sourcing Equipment
• PoE Powered Devices
• Telecom DC/DC converters
• White LED boost converters
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
VDS
VGS
ID
Limit
100
Units
DrainꢀSource Voltage
GateꢀSource Voltage
Continuous Drain Current
Pulsed Drain Current b
V
±20
TC=25°C
TC=25°C
21
A
IDM
100
Continuous Source Current (Diode Conduction)
Power Dissipation
IS
30
A
PD
50
W
°C
Operating Junction and Storage Temperature Range
TJ, Tstg
ꢀ55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Symbol Maximum
Units
a
Maximum JunctionꢀtoꢀAmbient
Maximum JunctionꢀtoꢀCase
RθJA
RθJC
50
3
°C/W
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DSꢀAM30N10ꢀ70D_revC
ANALOGPOWER [ ANALOG POWER ]
