Analog Power
AM30N03-59D
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
59 @ VGS = 10V
88 @ VGS = 4.5V
ID (A)
24
20
30
•
•
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
DPAK saves board space
•
•
Fast switching speed
High performance trench technology
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Units
Drain-Source Voltage
VDS
VGS
ID
IDM
IS
30
±20
24
75
30
50
V
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
TC=25 C
o
A
Continuous Source Current (Diode Conduction)a
A
W
oC
a
o
PD
Power Dissipation
TC=25 C
Operating Junction and Storage Temperature Range
T, T -55 to 175
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Units
Maximum Junction-to-Ambienta
Maximum Junction-to-Case
oC/W
50
RθJA
RθJC
oC/W
3.0
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
1
Publication Order Number:
DS-AM30N03-59_F
PRELIMINARY
ANALOGPOWER [ ANALOG POWER ]
