Analog Power
AM2381P
P-Channel 80-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
ID (A)
0.5 @ VGS = -10V
0.6 @ VGS = -4.5V
1.4
1.3
-80
•
•
Low rDS(on) provides higher efficiency and
extends battery life
G
S
Low thermal impedance copper leadframe
SOT-23 saves board space
D
•
•
Fast switching speed
High performance trench technology
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
-80
20
V
A
TA=25oC
TA=70oC
0.9
0.7
1.6
-1
Continuous Drain Currenta
ID
Pulsed Drain Currentb
IDM
IS
Continuous Source Current (Diode Conduction)a
Power Dissipationa
A
TA=25oC
TA=70oC
1.3
0.8
PD
W
oC
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol Maximum Units
t <= 5 sec
Steady-State
100
Maximum Junction-to-Ambienta
oC/W
RTHJA
166
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
1
Publication Order Number:
DS-AM2381_A
PRELIMINARY
ANALOGPOWER [ ANALOG POWER ]
