Analog Power
AM2371P
P-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
Key Features:
rDS(on) (Ω)
VDS (V)
-100
ID(A)
-1
• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed
1.2 @ VGS = -10V
1.3 @ VGS = -4.5V
-0.9
Typical Applications:
• PoE Power Sourcing Equipment
• PoE Powered Devices
• Telecom DC/DC converters
• White LED boost converters
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
VDS
Limit
-100
±20
Units
Drain-Source Voltage
Gate-Source Voltage
V
VGS
TA=25°C
TA=70°C
-1
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
ID
A
-0.8
IDM
IS
-10
-1.6
A
TA=25°C
TA=70°C
1.3
Power Dissipation a
PD
W
°C
0.8
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol Maximum
Units
t <= 10 sec
Steady State
100
Maximum Junction-to-Ambient a
°C/W
RθJA
166
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number:
DS-AM2371P_2010