Analog Power
AM1535CE
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
ID (A)
0.09 @ VGS = 4.5V
0.18 @ VGS = 2.5V
0.21 @ VGS = -4.5V
0.29 @ VGS = -2.5V
1.5
1.1
30
-1.0
-0.9
-30
•
•
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SC70-6 saves board space
•
•
Fast switching speed
High performance trench technology
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter Symbol N-Channel P-Channel Units
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
8
-30
-8
V
TA=25oC
TA=70oC
1
1.5
Continuous Drain Currenta
ID
A
1.3
0.7
0.8
Pulsed Drain Currentb
-1.2
-0.25
0.3
IDM
IS
Continuous Source Current (Diode Conduction)a
TA=25oC
0.25
0.3
A
Power Dissipationa
PD
W
TA=70oC
0.21
0.21
oC
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol Maximum Units
t <= 5 sec
Steady-State
415
Maximum Junction-to-Ambienta
oC/W
RTHJA
460
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
1
Publication Order Number:
DS-AM1535CE_A
PRELIMINARY
ANALOGPOWER [ ANALOG POWER ]
