Analog Power
AM1431P
P-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
V (V)
rDS(on) (OHM)
ID (A)
DS
0.112 @V = -10V -3.1
GS
-30
0.172 @V = -4.5V -2.5
GS
SC70-6
Top View
S
•
•
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SC70-6 saves board space
G
D
D
G
1
2
3
6
5
4
D
D
S
•
•
Fast switching speed
High performance trench technology
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA= 25 oC UNLESS OTHERWISE NOTED)
Parameter Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
-30
±20
V
o
TA=25 C
-3.1
-2.5
-10
±1.4
1.56
0.81
Continuous Drain Currenta
Pulsed Drain Currentb
ID
o
A
TA=70 C
IDM
IS
Continuous Source Current (Diode Conduction)a
A
o
TA=25 C
a
PD
W
Power Dissipation
o
TA=70 C
oC
Operating Junction and Storage Temperature Range
T, T -55 to 150
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol Maximum Units
t <= 5 sec
Steady-State
80
125
Maximum Junction-to-Ambienta
oC/W
R
THJA
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
1
Publication Order Number:
DS-AM1431_A
PRELIMINARY
ANALOGPOWER [ ANALOG POWER ]
