Analog Power
AM1340N
N-Channel 40V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
V (V)
rDS(on) (Ω)
ID (A)
1.7
1.4
DS
0.086 @V = 10 V
GS
40
0.128 @V = 4.5V
GS
•
•
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SC70-3 saves board space
Fast switching speed
High performance trench technology
G
S
D
•
•
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
40
±20
1.7
1.4
±20
1.6
V
o
TA=25 C
Continuous Drain Currenta
Pulsed Drain Currentb
ID
o
A
TA=70 C
IDM
IS
Continuous Source Current (Diode Conduction)a
A
o
TA=25 C
0.34
0.22
a
PD
W
Power Dissipation
o
TA=70 C
oC
Operating Junction and Storage Temperature Range
T, T -55 to 150
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol Maximum Units
t <= 5 sec
Steady-State
100
Maximum Junction-to-Ambienta
oC/W
RTHJA
166
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature
1
Publication Order Number:
DS-AM1340_A
PRELIMINARY
ANALOGPOWER [ ANALOG POWER ]
