PD500
500μm InGaAs Photodiode
FEATURES
•
•
•
•
Planar Structure
Dielectric Passivation
High Shunt Resistance
High Responsivity
APPLICATIONS
•
•
High Sensitivity Instrumentation
Laser Back Facet Monitoring
PD500-0xx
Ceramic Sub-Mount
PD500-1xx
TO can Package
PRODUCT DESCRIPTION
The PD500 is an InGaAs photodiode with a
photosensitive region 500μm in diameter. It is
intended for use in high sensitivity
instrumentation, laser back-facet monitoring
and low bit rate communication systems.
Planar semiconductor design and dielectric
passivation provide superior noise performance.
The device can be assembled on a ceramic sub-
mount or in an hermetic TO46 can. Custom
packages are an option.
ELECTRICAL CHARACTERISTICS
Table 1: Electrical Specifications
PARAMETER
Dark Current (I
D
)
(1)
Capacitance
(2)
Responsivity at 1310nm
Responsivity at 1550nm
Rise/Fall time
Shunt Resistance (Class A)
(2)
(1) 5V reverse bias
(2) 0V reverse bias
MIN
-
-
0.80
0.85
-
50
TYP
25
20
0.90
0.95
3
-
MAX
-
-
-
-
-
-
UNIT
nA
pF
A/W
A/W
ns
MΩ
ANADIGICS [ ANADIGICS, INC ]
