PD3M
3mm InGaAs Photodiode
FEATURES
•
•
•
•
Planar Structure
Dielectric Passivation
High Shunt Resistance
High Responsivity
APPLICATIONS
•
•
Sensing
High Sensitivity Instrumentation
PD3M-0xx
Ceramic Sub-Mount
PD3M-1xx
TO5 can Package
PRODUCT DESCRIPTION
The PD3M is an InGaAs photodiode with a
photosensitive region 3mm in diameter.
Applications include sensing and other high
sensitivity instrumentation. Class A devices
feature very low dark current and high shunt
resistance.
High reliability is assured through planar
semiconductor design and dielectric passivation.
The device can be assembled on a ceramic sub-
mount or in an hermetic TO5 can. Custom
packages are an option.
ELECTRICAL CHARACTERISTICS
Table 1: Electrical Specifications
PARAMETER
Dark Current (I
D
)
(1)
Capacitance
(2)
Responsivity at 1310nm
Responsivity at 1550nm
Rise/Fall time
Shunt Resistance (Class A)
(2)
Shunt Resistance (Class B)
(2)
Noise Equivalent Power (Class A)
Noise Equivalent Power (Class B)
D* (Class A)
D* (Class B)
(1) 0.3V reverse bias
(2) 0V reverse bias
MIN
-
-
0.80
0.85
-
1.0
0.1
-
-
-
-
TYP
50
700
0.90
0.95
175
-
-
5x10
-14
2x10
-13
4x10
12
1.5x10
12
MAX
-
-
-
-
-
-
-
-
-
-
-
UNIT
nA
pF
A/W
A/W
ns
MΩ
MΩ
WHz
-1/2
WHz
-1/2
cmHz
1/2
W
-1
cmHz
1/2
W
-1
ANADIGICS [ ANADIGICS, INC ]
