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AWT6624RM45P9 参数 Datasheet PDF下载

AWT6624RM45P9图片预览
型号: AWT6624RM45P9
PDF下载: 下载PDF文件 查看货源
内容描述: 多模式HELP4TM UMTS1700 (频段49310 ) WCDMA / CDMA线性PAM [Multi-Mode HELP4TM UMTS1700 (Band 49310) WCDMA/CDMA Linear PAM]
分类和应用: 射频微波
文件页数/大小: 11 页 / 645 K
品牌: ANADIGICS [ ANADIGICS, INC ]
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AWT6624
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplifier may be placed in a shutdown mode
by applying logic low levels (see Operating Ranges
table) to the V
EN
, V
MODE1
and V
MODE2
voltages.
Bias Modes
The power amplifier may be placed in either Low,
Medium or High Bias modes by applying the
appropriate logic level (see Operating Ranges table)
to the V
MODE
pins. The Bias Control table below lists
the recommended modes of operation for various
applications.
Three operating modes are recommended to optimize
current consumption. High Bias/High Power operating
mode is for P
OUT
levels > 16 dBm. At ~17dBm - 7 dBm,
the PA could be switched to Medium Power Mode. For
P
OUT
levels < ~8 dBm, the PA could be switched to Low
Power Mode for extremely low current consumption.
Table 6: Bias Control
APPLICATION
Low power
(Low Bias Mode)
Med power
(Medium Bias Mode)
High power
(High Bias Mode)
Shutdown
P
OUT
LEVELS
(Rel. 99)
< +8 dBm
> 7 dBm
< +17 dBm
> +16 dBm
-
BIAS
MODE
Low
Low
High
Shutdown
V
EN
+1.8 V
+1.8 V
+1.8 V
0 V
V
MODE1
+1.8 V
+1.8 V
0 V
0 V
V
MODE2
+1.8 V
0 V
0 V
0 V
V
CC
3.2 - 4.2 V
3.2 - 4.2 V
3.2 - 4.2 V
3.2 - 4.2 V
V
BATT
> 3.2 V
> 3.2 V
> 3.2 V
> 3.2 V
V
BATT
C5
2.2 µF
C1
0.1µF
1
GND at slug
V
BATT
RF
IN
V
MODE2
V
MODE1
V
EN
V
CC
RF
OUT
CPL
IN
GND
10
9
8
7
C3
33 pF
C2
0.1µF
C4
2.2 µF ceramic
V
CC
RF
IN
V
MODE2
V
MODE1
V
EN
2
3
4
5
CPL
IN
C6
33 pF
RF
OUT
CPL
OUT
6
CPL
OUT
Figure 3: Evaluation Board Schematic
6
Data Sheet - Rev 2.8
01/2012