Cellular CDMA 3.4 V/28 dBm
Linear Power Amplifier Module
Data Sheet - Rev 2.0
AWT6301R
FEATURES
•
•
InGaP HBT Technology
High Efficiency:
40%, V
MODE
= 0 V
41%, V
MODE
= +2.85 V (no mode switching)
•
•
•
•
•
•
•
•
Low Quiescent Current: 50 mA
Low Leakage Current in Shutdown Mode: <1
µA
V
REF
= +2.85 V (+2.75 V Min Over Temp.)
Optimized for a 50
Ω
System
Low Profile Surface Mount Package: 1.1mm
CDMA 1XRTT, 1xEV-DO Compliant
Pinout Enables Easy Phone Board Migration
From 4 mm x 4 mm Package
RoHS Compliant Package, 250
o
C MSL-3
APPLICATIONS
•
CDMA/EVDO Cell-band Wireless Handsets and
Data Devices
M9 Package
8 Pin 3 x 3 x 1 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWT6301R meets the increasing demands for
higher efficiency and linearity in CDMA1X handsets.
The package pinout was chosen to enable handset
manufacturers to switch from a 4mm x 4mm PA
module with very few layout changes to the phone
board. The device is manufactured on an advanced
InGaP HBT MMIC technology offering state-of-the-
art reliability, temperature stability, and ruggedness.
Selectable bias modes that optimize efficiency
for different output power levels, and a shutdown
mode with low leakage current, serve to increase
handset talk and standby time. The self contained
3 mm x 3 mm x 1 mm surface mount package
incorporates matching networks optimized for output
power, efficiency and linearity in a 50
Ω
system.
GND at slug (pad)
V
REF
1
Bias Control
8
GND
RF
OUT
V
MODE
2
RF
IN
7
3
6
GND
V
CC1
4
5
V
CC2
Figure 1: Block Diagram
10/2008
ANADIGICS [ ANADIGICS, INC ]
