ꢁWt6280
ꢀLꢀCtꢃICꢁL CHꢁꢃꢁCtꢀꢃIstICs
table 2: ꢁbꢅoluꢄe Maximum ꢃaꢄingꢅ
PꢁꢃꢁMꢀtꢀꢃ
Supply Voltage (VBATT
RF Input Power (RFIN
Control Voltage (VRAMP
Storage Temperature (TSTG
MIN
-
MꢁX
+7
ꢂNIts
V
)
)
-
11
dBm
V
)
-0.3
-55
1.8
150
)
°C
sꢄreꢅꢅeꢅ in exceꢅꢅ of ꢄhe abꢅoluꢄe raꢄingꢅ may cauꢅe permanenꢄ
damage. Funcꢄional operaꢄion iꢅ noꢄ implied under ꢄheꢅe
condiꢄionꢅ. ꢀxpoꢅure ꢄo abꢅoluꢄe raꢄingꢅ for exꢄended periodꢅ
of ꢄime may adverꢅely affecꢄ reliabiliꢄy.
GND
GND
DCS/PCS_IN
>+2500 V <-2500 V
DCS/PCS_OUT
>+2500 V <-2500 V
16
15
14
13
1
2
3
4
17
18
BS
GND
>+2500 V <-2500 V
TX_EN
>+2500 V <-2500 V
GND
N/C
VBATT
>+2500 V <-2500 V
GND
CEXT
GND
GND
5
6
7
12
11
>+2500 V <-2500 V
VRAMP
>+2500 V <-2500 V
GSM850/900_OUT
>+2500 V <-2500 V
GSM850/900_IN
>+2500 V <-2500 V
9
10
8
GND
GND
Figure 3: ꢀsD Pin ꢃaꢄing
ꢀLꢀCtꢃOstꢁtIC DIsCHꢁꢃGꢀ sꢀNsItIVItY
The AWT6280 part was tested to determine the ESD
sensitivity of each package pin with respect to ground.
All the package pins were subjected to an ESD
pulse event using the Human Body Model outlined
in JESD22-A114C.01 in either polarity with respect
to ground. The pre and post test I-V characteristics
of each pin are recorded. The ratings on each pin
require that it sustain the ESD event and show no
degradation.
3
Data Sheet - Rev 2.1
11/2008