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AWT6280RM11P8 参数 Datasheet PDF下载

AWT6280RM11P8图片预览
型号: AWT6280RM11P8
PDF下载: 下载PDF文件 查看货源
内容描述: 四频GSM / GPRS /极性EDGE功率放大器模块集成功率控制 [Quad-band GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control]
分类和应用: 放大器射频微波功率控制功率放大器GSM高功率电源
文件页数/大小: 16 页 / 585 K
品牌: ANADIGICS [ ANADIGICS, INC ]
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ꢁWt6280  
ꢀLꢀCtꢃICꢁL CHꢁꢃꢁCtꢀꢃIstICs  
table 2: ꢁbꢅoluꢄe Maximum ꢃaꢄingꢅ  
PꢁꢃꢁMꢀtꢀꢃ  
Supply Voltage (VBATT  
RF Input Power (RFIN  
Control Voltage (VRAMP  
Storage Temperature (TSTG  
MIN  
-
MꢁX  
+7  
ꢂNIts  
V
)
)
-
11  
dBm  
V
)
-0.3  
-55  
1.8  
150  
)
°C  
sꢄreꢅꢅeꢅ in exceꢅꢅ of ꢄhe abꢅoluꢄe raꢄingꢅ may cauꢅe permanenꢄ  
damage. Funcꢄional operaꢄion iꢅ noꢄ implied under ꢄheꢅe  
condiꢄionꢅ. ꢀxpoꢅure ꢄo abꢅoluꢄe raꢄingꢅ for exꢄended periodꢅ  
of ꢄime may adverꢅely affecꢄ reliabiliꢄy.  
GND  
GND  
DCS/PCS_IN  
>+2500 V <-2500 V  
DCS/PCS_OUT  
>+2500 V <-2500 V  
16  
15  
14  
13  
1
2
3
4
17  
18  
BS  
GND  
>+2500 V <-2500 V  
TX_EN  
>+2500 V <-2500 V  
GND  
N/C  
VBATT  
>+2500 V <-2500 V  
GND  
CEXT  
GND  
GND  
5
6
7
12  
11  
>+2500 V <-2500 V  
VRAMP  
>+2500 V <-2500 V  
GSM850/900_OUT  
>+2500 V <-2500 V  
GSM850/900_IN  
>+2500 V <-2500 V  
9
10  
8
GND  
GND  
Figure 3: ꢀsD Pin ꢃaꢄing  
ꢀLꢀCtꢃOstꢁtIC DIsCHꢁꢃGꢀ sꢀNsItIVItY  
The AWT6280 part was tested to determine the ESD  
sensitivity of each package pin with respect to ground.  
All the package pins were subjected to an ESD  
pulse event using the Human Body Model outlined  
in JESD22-A114C.01 in either polarity with respect  
to ground. The pre and post test I-V characteristics  
of each pin are recorded. The ratings on each pin  
require that it sustain the ESD event and show no  
degradation.  
3
Data Sheet - Rev 2.1  
11/2008  
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