AWT6108
Table 6: Electrical Characteristics for GSM850/900
(V
BATT
= 3.5 V, V
REG
= 2.8 V, P
IN
= 2.0 dBm, Pulse Width = 1154 µs, Duty 25%,
Z
IN
= Z
OUT
= 50W, T
C
= 25
°
C, V
RAMP
= 1.6 V, BS = LOW, TX_EN = HIGH)
PAR AME T E R
Operati ng Frequency (F
O
)
Input Power
Output Power (P
MAX
)
Degraded Output Power
PAE @ P
MAX
Forward Isolati on 1
Forward Isolati on 2
Cross Isolati on
(2F
O
@ DCS/PCS port)
Harmoni cs
2fo
3fo
Stabi li ty
Ruggedness
MIN
824
880
0
34.5
32.0
48
-
-
-
-
-
T YP
-
-
2
35
32.5
55
-37
-25
-30
-17
-30
M AX
849
915
5
-
-
-
-30
-10
-20
-5
-15
U N IT
MHz
dBm
dBm
dBm
%
dBm
dBm
dBm
Freq = 824 to 915 MHz
V
BATT
= 3.0 V, T
C
= 85 °C,
V
REG
= 2.7 V, P
IN
= 0 dBm
Freq = 824 to 915 MHz
TX_EN = LOW, P
IN
= 5 dBm
TX_EN = HIGH, V
RAMP
= 0.2 V,
P
IN
= 5 dBm
V
RAMP
= 0.2 V to V
RAMP_MAX
C OMME N T S
dBm
Over all output power levels
VSWR = 8:1 all phases,
P
OUT
< 34.5 dBm
F
OUT
< 1GHz
F
OUT
> 1GHz
All load phases, P
OUT
< 34.5 dBm
-
-
-
-
-
-
-
-86
-36
-30
10:1
-83
dBm
dBm
FT
X
= 849 MHz, RBW = 100 kHz,
F
RX
= 869 to 894 MHz,
P
OUT
< 34.5 dBm
FT
X
= 915 MHz, RBW = 100 kHz,
F
RX
= 925 to 935 MHz,
P
OUT
< 34.5 dBm
FT
X
= 915 MHz, RBW = 100 kHz,
F
RX
= 935 to 960 MHz,
P
OUT
< 34.5 dBm
Over all output power levels
RX Noi se Power
-
-81
-77
dBm
-
Input VSWR
-
-86
-
-83
2.5:1
dBm
PRELIMINARY DATA SHEET - Rev 1.0
08/2003
5
ANADIGICS [ ANADIGICS, INC ]
