AWB7228
Table 4: Electrical Specifications
(T
C
= +25 °C, V
CC
= +4.5 V, V
REF
= +2.85 V, 50
Ω
system)
PARAMETER
Gain
(2)
ACPR
(1), (2), (3)
@ 10 MHz
@ 20 MHz
Power-Added Efficiency
(1), (2), (3)
Thermal Resistance (R
JC
)
(4)
Supply Current
(1), (2), (3)
Quiescent Current (Icq)
Reference Current
Leakage Current
Harmonics
2f
O
3f
O
, 4f
O
Input Return Loss
Output Return Loss
RF Switching Time
(5)
Rise Time (PA “off” to “on”)
Fall Time (PA “on” to “off”)
Spurious Output Level
(all spurious outputs)
MIN
25
-
-
12
-
-
200
12
-
-
-
12
12
-
-
TYP
27
-47
-60
14
12.5
795
275
14
3
-40
-55
18
18
-
-
MAX
32
-45
-53
-
-
-
330
19
10
-30
-50
-
-
12
4
UNIT
dB
dBc
%
°C/W
mA
mA
mA
µA
through V
REF
pin
V
CC
= +4.65 V, V
REF
= 0 V
Junction to Case
total through V
CC
pins
COMMENTS
dBc
dB
dBm
V
CC
= +4.5 V, V
REF
switched
between 0 V and +2.85 V
P
OUT
≤
+27 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all voltage and
temperature operating ranges
V
CC
= +4.5 V, P
OUT
= +27 dBm
Applies over full operating
temperature range
µs
-
-
-60
dBc
Load mismatch stress with no
permanent degradation or failure
8:1
-
-
VSWR
Notes:
(1) Measured at 2620 MHz.
(2) P
OUT
= +27 dBm.
(3) E-TM1.1 LTE 10 MHz BW.
(4) Use only V
CC2
(pin 11) current when calculating device junction temperature.
(5) Rise Time defined from time at which V
REF
is switched from 0 V to +2.85 V, to time at which the RF output power
achieves 90% of the average steady-state “on” level; Fall Time defined from time at which V
REF
is switched from +2.85 V
to 0 V, to time at which the RF output power decreases to 10% of the average steady-state “on” level.
4
PRELIMINARY DATA SHEET - Rev 1.2
09/2012
ANADIGICS [ ANADIGICS, INC ]
