ATA7609
PACKAGING AND TESTING
The ATA7609 is provided as bare die. For optimum
VEE Connections
performance, the die should be packaged in a In order to achieve optimal performance, the VEE
hermetic enclosure and a low inductance ground supply pads must be bypassed as close to the chip
plane should be made available for power supply as possible with one or two high resonant frequency,
bypassing and ground bonds. When packaging the low value capacitance, MIM capacitors. In either
ATA7609, the temperature of the die must be kept case, both VEE bond pads need to be connected to
below 260 °C to ensure device reliability. The reduce the supply bond wire inductance.
ATA7609 has backside metal but no ground vias are
V
OUT and VOUT Connections
connected to the backside of the die, so it is critical
to bond all of the ground pads to reduce ground
inductance. The die can be attached to the substrate
using epoxy or solder. A good thermally conductive,
silver-filled epoxy is recommended for epoxy
mounting. If solder is used for die attach, exposure
to temperatures at or above 260 °C must be limited
to ensure the device reliability. A soft silicon/rubber
tip collet should be used for die mounting, although
tweezers can be used with extreme care.
The ATA7609 provides a differential output that can
be AC or DC coupled to the next stage of the receiver.
The output bond wires should be kept below 1 nH
for the best performance. If the device is being used
in a single-ended configuration, the unused output
port must be terminated into 50 Ω.
C
EXT Connection
In order to achieve the desired low frequency cutoff,
an external capacitor is required. A low inductance
multilayer chip capacitor of value 10 nF is
recommended.
Thermosonic ball bonding, at a stage temperature
of 150 to 175 °C, with 1 to 1.3 mil gold wire, is the
recommended interconnect technique. The bond
force, time, and ultrasonic power are all critical
parameters and should be optimized to achieve the
best bonding performance. The recommended
bonding parameters are:
RF Testing
The following parameters are 100% RF tested on
wafer in production at -5.2V at room temperature
with 0 input forced current and 1.6mA DC input
current: current, transimpedance, bandwidth,
peaking, group delay, S11, S22, input offset voltage
and output offset voltage.
Stage Temperature: 175 °C
Bond Time: 15 ms
Bond Ultrasonic Power: 70 mW
Bond Force: 70 g
All other parameters are guaranteed by design.
Bond Velocity: 60 mils/ms
I
IN Connection
For optimal performance, the bond wire from the
photodetector to IIN should be around 1nH. As the
inductance of this connection increases beyond 1nH,
more gain peaking will occur and the group delay
performance will degrade.
PRELIMINARY DATA SHEET - Rev 1.0
10/2002
8
ANADIGICS [ ANADIGICS, INC ]
