AS29LV800
October 2000
®
DC electrical characteristics
Parameter
V
= 2.7–3.6V
Unit
CC
Symbol Test conditions
Min
-
Max
±1
Input load current
I
I
I
I
I
V
V
V
= V to V , V = V
CC MAX
µA
LI
IN
SS
CC
CC
A9 Input load current
= V , A9 = 10V
CC MAX
35
µA
µA
LIT
LO
CC
Output leakage current
= V to V , V = V
CC MAX
-
-
-
±1
20
OUT
SS
CC
CC
Active current, read @ 5MHz
Active current, program/erase
CE = V , OE = V
mA
mA
CC1
CC2
IL
IH
CE = V , OE = V
100
IL
IH
IH
CE = V , OE = V
;
*
IL
Automatic sleep mode
I
-
5
µA
CC3
V = 0.3V, V = V - 0.3V
IL
IH
CC
Standby current
I
I
CE = V - 0.3V, RESET = V - .3V
-
5
µA
µA
V
SB
PD
CC
CC
3
Deep power down current
RESET = 0.3V
-
5
Input low voltage
Input high voltage
Output low voltage
Output high voltage
V
V
V
V
V
V
-0.5
0.7×V
-
0.8
IL
V + 0.3
CC
V
V
V
V
V
IH
CC
I
I
= 4.0mA, V = V
CC MIN
0.45
OL
OH
LKO
ID
OL
OH
CC
= -2.0 mA, V = V
0.85×V
CC
-
CC
CC MIN
Low V lock out voltage
1.5
9
-
CC
Input HV select voltage
11
* Automatic sleep mode enables the deep power down mode when addresses are stable for 150 ns. Typical sleep mode current is 200 nA.
DID 11-40002-A. 10/19/00
ALLIANCE SEMICONDUCTOR
15