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AS29LV800T-90TI 参数 Datasheet PDF下载

AS29LV800T-90TI图片预览
型号: AS29LV800T-90TI
PDF下载: 下载PDF文件 查看货源
内容描述: 3V 1M × 8 / 512K × 16的CMOS闪存EEPROM [3V 1M】8/512K】16 CMOS Flash EEPROM]
分类和应用: 闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 25 页 / 440 K
品牌: ANADIGICS [ ANADIGICS, INC ]
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AS29LV800  
March 2001  
®
Automated on-chip programming algorithm  
Automated on-chip erase algorithm  
START  
START  
Write erase command sequence  
(see below)  
Write program command sequence  
(see below)  
DATA polling or toggle bit  
successfully completed  
DATA polling or toggle bit  
successfully completed  
Erase complete  
Individual sector/multiple sector  
Increment  
address  
erase command sequence  
Chip erase command sequence  
×16 mode (address/data):  
×16 mode (address/data):  
Last  
NO  
address?  
555h/AAh  
2AAh/55h  
555h/80h  
555h/AAh  
2AAh/55h  
555h/10h  
555h/AAh  
2AAh/55h  
YES  
Programming completed  
555h/80h  
Program command sequence  
×16 mode (address/data):  
555h/AAh  
555h/AAh  
2AAh/55h  
2AAh/55h  
Sector address/30h  
Sector address/30h  
555h/A0h  
Program address/program data  
Sector address/30h  
optional sector erase commands  
The system software should check the status of DQ3 prior to and following each  
subsequent sector erase command to ensure command completion. The device may  
not have accepted the command if DQ3 is high on second status check.  
3/22/01; V.1.0  
Alliance Semiconductor  
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