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AS29LV800T-70RTC 参数 Datasheet PDF下载

AS29LV800T-70RTC图片预览
型号: AS29LV800T-70RTC
PDF下载: 下载PDF文件 查看货源
内容描述: 3V 1M × 8 / 512K × 16的CMOS闪存EEPROM [3V 1M】8/512K】16 CMOS Flash EEPROM]
分类和应用: 闪存内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 25 页 / 440 K
品牌: ANADIGICS [ ANADIGICS, INC ]
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March 2001  
AS29LV800  
®
Operating modes  
Mode  
CE  
L
OE  
L
WE  
A0  
L
A1  
A6  
L
A9  
VID  
VID  
A9  
X
RESET  
H
DQ  
ID read MFR code  
ID read device code  
Read  
H
L
Code  
Code  
DOUT  
High Z  
High Z  
DIN  
L
L
H
H
A0  
X
L
L
H
L
L
H
A1  
X
A6  
X
H
Standby  
H
L
X
X
H
Output disable  
Write  
H
H
X
X
X
X
H
L
H
L
A0  
L
A1  
H
H
A6  
L
A9  
VID  
VID  
H
Enable sector protect  
Sector unprotect  
L
VID  
VID  
Pulse/L  
Pulse/L  
H
X
L
L
H
H
X
Temporary sector  
unprotect  
X
X
X
X
X
X
X
VID  
X
Verify sector protect†  
Verify sector unprotect†  
Hardware Reset  
L
L
X
L
L
X
H
H
X
L
L
X
H
H
X
L
VID  
VID  
X
H
H
L
Code  
H
X
Code  
High Z  
L = Low (<V ) = logic 0; H = High (>V ) = logic 1; V = 10.0 1.0V; X = don’t care.  
IL  
IH  
ID  
In ×16 mode, BYTE = V . In ×8 mode, BYTE = V with DQ8-DQ14 in high Z and DQ15 = A-1.  
IH  
IL  
Verification of sector protect/unprotect during A9 = V  
ID.  
Mode definitions  
Item  
Description  
Selected by A9 = VID(9.5V–10.5V), CE = OE = A1 = A6 = L, enabling outputs.  
When A0 is low (VIL) the output data = 52h, a unique Mfr. code for Alliance Semiconductor Flash products.  
When A0 is high (VIH), DOUT represents the device code for the AS29LV800.  
ID MFR code,  
device code  
Selected with CE = OE = L, WE = H. Data is valid in tACC time after addresses are stable, tCE after CE is low  
and tOE after OE is low.  
Read mode  
Standby  
Selected with CE = H. Part is powered down, and ICC reduced to <1.0 µA when CE = VCC 0.3V = RESET. If  
activated during an automated on-chip algorithm, the device completes the operation before entering  
standby.  
Output disable Part remains powered up; but outputs disabled with OE pulled high.  
Selected with CE = WE = L, OE = H. Accomplish all Flash erasure and programming through the command  
register. Contents of command register serve as inputs to the internal state machine. Address latching occurs  
on the falling edge of WE or CE, whichever occurs later. Data latching occurs on the rising edge WE or CE,  
Write  
whichever occurs first. Filters on WE prevent spurious noise events from appearing as write commands.  
Hardware protection circuitry implemented with external programming equipment causes the device to  
disable program and erase operations for specified sectors. For in-system sector protection, refer to Sector  
protect algorithm on page 14.  
Enable  
sector protect  
Disables sector protection for all sectors using external programming equipment. All sectors must be  
protected prior to sector unprotection. For in-system sector unprotection, refer to Sector unprotect algorithm  
on page 14.  
Sector  
unprotect  
Verifies write protection for sector. Sectors are protected from program/erase operations on commercial  
programming equipment. Determine if sector protection exists in a system by writing the ID read command  
Verify sector  
protect/  
sequence and reading location XXX02h, where address bits A12–18 select the defined sector addresses. A  
unprotect  
logical 1 on DQ0 indicates a protected sector; a logical 0 indicates an unprotected sector.  
3/22/01; V.1.0  
Alliance Semiconductor  
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