AMT8630
ELECTRICAL CHARACTERISTICS
Table 1: Absolute Maximum Ratings
PARAMETER
MIN
-0.5
2
MAX
4.0
UNIT
V
Supply Voltage
Photodiode bias Voltage
Optical Input Power
Storage Temperature
10
V
-
+ 10
+ 125
dBm
- 40
o
C
Stresses in excess of the absolute ratings may cause permanent damage. Functional
operation is not implied under these conditions. Exposure to absolute ratings for extended
periods of time may adversely affect reliability.
Table 2: Electrical Specifications
PARAMETER
MIN
TYP
-
MAX
UNIT
nm
Wavelength
Sensitivity (1)
1250
1620
-
-20
3
-19
dB
Overload
-
-
-
dBm
A/W
A/W
nA
Responsivity 1550nm
Responsivity 1310nm
Dark current
0.80
0.90
0.85
0.2
12
8
0.75
-
-
5
Small signal transimpedance gain (differential)
Small signal 3dB bandwidth
Low frequency cutoff
Output return loss (differential)(2)
10.5
13.5
10
45
-
KΩ
7
-
GHz
KHz
dB
10
9
-
Output voltage swing (differential)
350
450
650
mVP-P
Optical return loss
Photodiode bias voltage
TIA supply voltage
TIA supply current
Power consumption
50
2.5
3.1
-
55
3.3
3.3
32
-
9
dB
V
3.5
-
V
mA
mW
85
105
142
o
Operating temperature
(1) 10Gb/s PRBS 231-, 1550nm, ER >12dB
(2) ½(S11 - S21 + S22 - S12), 100MHz – 9GHz
-40
25
85
C
Figure 2: Pin location
Table 3: Pin description
DESCRIPTION
PIN
NAME
2
3
1
VOUTP
Non-inverted output voltage. Logical ‘1’ with
an optical input. Output is not AC coupled.
2
3
4
VTIA
VPD
Amplifier supply voltage: 3.3V
Photodiode bias: 3.3V
4
1
VOUTN Inverted output voltage: Logical ‘0’ with an
optical input. Output is not AC coupled
5
Ground
Ground
5
ADVANCED PRODUCT INFORMATION – Rev 0.0
2
01/2006
ANADIGICS [ ANADIGICS, INC ]
