AMT8412
ELECTRICAL CHARACTERISTICS
Table 1: Absolute Maximum Ratings
PARAMETER
MIN
-0.5
-
MAX
+3.8
+ 5
UNIT
V
Supply Voltage
Optical Input Power
Storage Temperature
dBm
- 40
+ 125
o
C
Stresses in excess of the absolute ratings may cause permanent damage. Functional
operation is not implied under these conditions. Exposure to absolute ratings for extended
periods of time may adversely affect reliability.
Table 2: Electrical Specifications
PARAMETER
MIN
1250
-
TYP
-
MAX
UNIT
nm
Wavelength
1620
Detector Active Area
Sensitivity (1)
70
-
-
-
um
-23
2
dBm
dBm
A/W
A/W
Ω
Overload
Responsivity 1550nm
Responsivity 1310nm
Vpd resistance
0.95
0.85
270
3.5
7
240
1.8
3.6
1.7
40
90
-
340
5.0
10
Small signal transimpedance gain (50 Ω)
Small signal transimpedance gain (∞ Ω)
Small signal 3dB bandwidth
Output resistance
KΩ
KΩ
MHz
Ω
1.9
53
65
400
-
220
200
3.3
26
mVP-P
ps
Output voltage swing (differential 50 Ω)
Rise/Fall times 20% / 80%
TIA supply voltage
3.0
-
3.6
38
V
TIA supply current
mA
mW
Power consumption (3.3V)
-
86
134
o
Operating temperature
2.5Gb/s PRBS 231-1, 1550nm, ER >12dB, BER 10-10
-40
25
+85
C
Figure 2: Pin location (4-pin)
Figure 3: Pin location (5-pin)
Table 3: Pin description
DESCRIPTION
NAME
OUT
GND
TIA Output (Non-Inverted)
Supply Voltage (+3.3V)
TIA Output (Inverted)
Ground
GND
VCC
OUTQ
GND
OUTQ
OUT
OUTQ
OUT
VCC
VPD
VCC
(Bottom View)
(Bottom View)
Rev 0.1
2
ANADIGICS [ ANADIGICS, INC ]
