ALT5020
eLecTricAL cHArAcTeriSTicS
Tablꢀ 2: Absꢉlꢅtꢀ mꢂꢃꢂꢄꢅꢄ aꢃd maxꢂꢄꢅꢄ ratꢂꢃgs
pArAmeTer
min
-
TYp
0
mAX
10
uniT
dBm
V
RF Input (PIN)
VCC
0
3.4
3.4
1.8
25
5
VBATT
0
6
V
Control Voltage (VENABLE, VMODE)
Storage Temperature (TSTORAGE)
0
3.5
150
V
-40
°C
Functional operation to the specified performance is not implied under these conditions.
oꢊꢀꢆatꢂꢉꢃ ꢉꢇ aꢃy sꢂꢃglꢀ ꢊaꢆaꢄꢀtꢀꢆ ꢂꢃ ꢀxꢈꢀss ꢉꢇ thꢀ absꢉlꢅtꢀ ꢆatꢂꢃgs ꢄay ꢈaꢅsꢀ ꢊꢀꢆꢄaꢃꢀꢃt
daꢄagꢀ. nꢉ daꢄagꢀ ꢉꢈꢈꢅꢆs ꢂꢇ ꢉꢃꢀ ꢊaꢆaꢄꢀtꢀꢆ ꢂs sꢀt at thꢀ lꢂꢄꢂt whꢂlꢀ all ꢉthꢀꢆ ꢊaꢆaꢄꢀtꢀꢆs
aꢆꢀ sꢀt wꢂthꢂꢃ ꢃꢉꢆꢄal ꢉꢊꢀꢆatꢂꢃg ꢆaꢃgꢀs.
Tablꢀ 3: oꢊꢀꢆatꢂꢃg raꢃgꢀs
pArAmeTer
min
832
TYp
-
mAX
862
uniT
MHz
V
commenTS
UMTS Band 20
Operating Frequency (f)
Supply Voltage (VCC)
Battery Voltage (VBATT)
+0.6
+3.1
+3.4
+3.4
+4.4
+4.4
POUT < +27.7 dBm
POUT < +27.7 dBm
V
+1.35
0
+1.8
0
+3.1
+0.5
PA “on”
PA “shut down”
Enable Voltage (VENABLE)
V
V
+1.35
0
+1.8
0
+3.1
+0.5
Low Bias Mode
High Bias Mode
Mode Control Voltage (VMODE1)
RF Output Power (POUT) (1, 2, 3)
LTE, HPM
LTE, LPM
26.9
-
27.7
16
-
-
dBm
°C
TS 36.101 Rel 8 for LTE
Case Temperature (TC)
-30
-
+90
Thꢀ dꢀꢁꢂꢈꢀ ꢄay bꢀ ꢉꢊꢀꢆatꢀd saꢇꢀly ꢉꢁꢀꢆ thꢀsꢀ ꢈꢉꢃdꢂtꢂꢉꢃs; hꢉwꢀꢁꢀꢆ, ꢊaꢆaꢄꢀtꢆꢂꢈ ꢊꢀꢆꢇꢉꢆꢄaꢃꢈꢀ ꢂs gꢅaꢆaꢃtꢀꢀd ꢉꢃly
over the conditions defined in the electrical specifications.
Notes:
(1) For operation at Vcc = +3.1 V, Pout is derated by 0.8 dB.
(2) For operation at 105 °C, POUT is derated by 1.0 dB.
(3) LTE waveform characteristics up to 20 MHz QPSK, 18 RB’s.
advanced product information - rꢀꢁ 0.0
3
09/2013
ANADIGICS [ ANADIGICS, INC ]
