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AS1375-BTDT-18 参数 Datasheet PDF下载

AS1375-BTDT-18图片预览
型号: AS1375-BTDT-18
PDF下载: 下载PDF文件 查看货源
内容描述: 1A静态电流型,200mA LDO [1A Quiescent Current, 200mA LDO]
分类和应用:
文件页数/大小: 11 页 / 853 K
品牌: AMSCO [ AUSTRIAMICROSYSTEMS AG ]
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AS1375
Datasheet - E l e c t r i c a l C h a r a c t e r i s t i c s
6 Electrical Characteristics
V
IN
= V
OUT
+ 500mV or V
IN
= +2V (whichever is greater),C
IN
= C
OUT
= 1µF, EN = IN, T
AMB
= -40°C to +85ºC (unless
otherwise specified). Typical values are at T
AMB
= +25ºC.
Table 3. Electrical Characteristics
Symbol
V
IN
Parameter
Input Voltage
I
OUT
= 10mA
Output Voltage Accuracy
I
OUT
= 1 to 200mA, V
OUT
> 1.5V
I
OUT
= 1 to 200mA, V
OUT
< 1.5V
V
OUT
I
OUT
ILIMIT
Output Voltage Range
Guaranteed Output Current
(RMS)
Short-Circuit Current Limit
V
OUT
= 0
1
1
Condition
Min
2
-1
-1.5
-2
1.2
Typ
Max
5.5
+1
+1.5
+2
Unit
200
hn
ic a
al m
co s
A
nt G
en
ts
til
In-Regulation Current Limit
V
OUT
> 96% of nominal value
I
OUT
= 0
330
1.2
1
2
Ground-Pin Current
I
OUT
= 100µA
I
OUT
= 200mA
1.7
Dropout Voltage
2
250
I
Q
V
IN
-
V
OUT
I
OUT
= 200mA, V
OUT
2.8V
I
OUT
= 200mA, 2V < V
OUT
< 2.8V
ΔV
LNR
ΔV
LDR
Line Regulation
V
IN
from (V
OUT
+ 500mV) to 5.5V,
I
LOAD
= 10mA
I
OUT
= 1mA to 200mA
-0.125
Load Regulation
Shutdown
I
OFF
V
IH
V
IL
I
EN
Shutdown Supply Current
EN Input Threshold
EN = GND
2V < V
IN
< 5.5V
1.2
2V < V
IN
< 5.5V
EN Input Bias Current
Startup Time
EN = IN or GND
from EN to 90% of V
OUT(NOM)
from EN to 10% of V
OUT(NOM)
Shutdown Time
Thermal Protection
T
SHDNN
Thermal Shutdown
Temperature
ΔT
SHDNN
Thermal Shutdown Hysteresis
Te
c
1. Guaranteed by production test of load regulation.
2. Dropout voltage is defined as V
IN
- V
OUT
, when V
OUT
is 100mV below the value of V
OUT
measured for V
IN
=
(V
OUT(NOM)
+ 500mV). Since the minimum input voltage is 2V, this specification is only valid when V
OUT(NOM)
>
2V.
3. Guaranteed by design.
Note:
All limits are guaranteed. The parameters with min and max values are guaranteed with production tests or
SQC (Statistical Quality Control) methods.
Revision 1.02
lv
5.0
V
330
450
µA
120
200
350
170
+0.125
0.003
10
100
nA
V
V
nA
µs
0.4
3
1
750
500
160
20
al
%
mA
mA
mA
mV
%/V
%/mA
40
ºC
ºC
4 - 10
id
%
%
V