AS1334
Datasheet - Electrical Characteristics
6 Electrical Characteristics
TA = TJ = -40ºC to +85ºC; PVIN = VDD = EN = 3.6V, unless otherwise noted
. Typ. values are at TA=25°C.
Table 3. Electrical Characteristics
Symbol
Parameter
Conditions
Min
Typ Max Units
1.176 1.2 1.224
V
V
V
V
V
V
1.47
1.5
1.53
1.764 1.8 1.836
VOUT
Output Voltage
PVIN = 3.6V
2.45
2.94
2.5
3.0
2.55
3.06
3.234 3.3 3.366
EN = SW = 0V1
ISHDN
IQ
Shutdown supply current
DC bias current into VDD
0.01
2
µA
FB = 0V, No Switching2
1
1.4
mA
I
I
SW = 200mA; TA = +25°C
SW = 200mA
140
200
230
415
485
RDSON(P) Pin-Pin Resistance for PFET
RDSON(N) Pin-Pin Resistance for NFET
mΩ
mΩ
ISW = -200mA; TA = +25°C
ISW = -200mA
300
ILIM,PFET Switch peak current limit
935 1100 1200 mA
POK Output
POK Output Low Voltage
POK sinking 0.1mA
VOL
0.05
90
0.2
500
93
V
nA
%
POK Output High Leakage Current POK = 3.6V
POK Threshold Rising edge, referenced to VOUT(NOM)
Enable Input
VIH,EN
Logic high input threshold
VIL,EN
87
1.2
V
V
Logic low input threshold
Pin pull down current
0.5
10
IPIN,ENABLE
Oscillator
FOSC
5
2
µA
Internal oscillator frequency
1.8
2.2 MHz
1. Shutdown current includes leakage current of PFET.
2. IQ specified here is when the part is operating at 100% duty cycle.
System Characteristics
TA = 25ºC; PVIN = VDD = EN = 3.6V, unless otherwise noted
. The following parameters are verified by characterisation
and are not production tested
.
Table 4. System Characteristics
Symbol
Parameter
Conditions
Min Typ Max Units
EN = Low to High, VIN = 4.2V, COUT
10µF, IOUT ≤ 1mA
=
Turn on time (from Enable low to
high transition)
T_ON
210 350
µs
Efficiency (L = 3.3µH, DCR ≤
100mΩ)
VIN = 3.6V, IOUT = 400mA
η
96
5
%
Ripple voltage, PWM mode1
VIN = 4.2V, IOUT = 10mA to 400mA
VOUT_ripple
mVp-p
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