SMD Type
NPN Transistors
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
AMS9013
Unit: mm
IC
Transistors
Features
+0.1
2.4
-0.1
Collector Current :I
C
=0.5A
1
2
+0.1
1.3
-0.1
Excellent h
FE
linearity
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
40
25
5
500
300
150
-55 to 150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector - base breakdown voltage
Collector - emitter breakdown voltage
Emitter - base breakdown voltage
Collector cut - off current
Collector cut -off current
Emitter cut - off current
DC current gain
Collector - emitter saturation voltage
Base - emitter saturation voltage
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Testconditons
I
c
= 100 A
I
c
= 0.1mA
I
E
=100 A
I
E
=0
I
B
=0
I
C
=0
Min
40
25
5
0.1
0.1
0.1
120
40
0.6
1.2
150
V
V
MHz
400
Typ
Max
Unit
V
V
V
A
A
A
V
CB
=40 V , I
E
=0
V
CE
=20V , I
B
=0
V
EB
= 5V , I
C
=0
V
CE
=1V, I
C
= 50mA
V
CE
=1V, I
C
=500mA
I
C
=500 mA, I
B
= 50mA
I
C
=500 mA, I
B
= 50mA
V
CE
=6V, I
C
= 20mA,f=30MHz
h
FE
Classification
Marking
Rank
hFE
L
120 to 200
J3
H
200 to 350
J
300 to 400
1
0-0.1
AMS [ Advanced Monolithic Systems Ltd ]
