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AMS73CAG02808RALJH7 参数 Datasheet PDF下载

AMS73CAG02808RALJH7图片预览
型号: AMS73CAG02808RALJH7
PDF下载: 下载PDF文件 查看货源
内容描述: 高性能的1Gbit DDR3 SDRAM [HIGH PERFORMANCE 1Gbit DDR3 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 31 页 / 683 K
品牌: AMS [ Advanced Monolithic Systems Ltd ]
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AMS73CAG01808RA  
CKE Truth Table  
(a) Note 1~7 apply to the entire Command truth table  
(b) CKE low is allowed only if tMRD and tMOD are satisfied  
CKE  
3
Command (N)  
2
1
1
Action (N)3  
Notes  
Current State  
Previous Cycle  
(N-1)  
Current Cycle  
(N)  
RAS, CAS, WE, CS  
L
L
L
H
L
H
L
L
L
L
L
L
L
X
Maintain Power-Down  
Power Down Exit  
14, 15  
11, 14  
Power Down  
Self Refresh  
DESELECT or NOP  
X
L
Maintain Self Refresh  
Self Refresh Exit  
15, 16  
L
DESELECT or NOP  
DESELECT or NOP  
DESELECT or NOP  
DESELECT or NOP  
DESELECT or NOP  
DESELECT or NOP  
DESELECT or NOP  
REFRESH  
8, 12, 16  
11, 13, 14  
11, 13, 14, 17  
11, 13, 14, 17  
11, 13, 14, 17  
11  
Bank(s) Active  
Reading  
H
H
H
H
H
H
H
Active Power Down Entry  
Power Down Entry  
Writing  
Power Down Entry  
Precharging  
Refreshing  
Power Down Entry  
Precharge Power Down Entry  
Precharge Power Down Entry  
Self Refresh Entry  
11,13, 14, 18  
9, 13, 18  
10  
All Banks Idle  
For more details with all signals See “Command Truth Table,” on previous page  
Notes:  
1. CKE (N) is the logic state of CKE at clock edge N; CKE (N–1) was the state of CKE at the previous clock edge.  
2. Current state is defined as the state of the DDR3 SDRAM immediately prior to clock edge N  
3. COMMAND (N) is the command registered at clock edge N, and ACTION (N) is a result of COMMAND (N), ODT is not included here  
4. All states and sequences not shown are illegal or reserved unless explicitly described elsewhere in this document  
5. The state of ODT does not affect the states described in this table. The ODT function is not available during Self Refresh  
6. CKE must be registered with the same value on tCKEmin consecutive positive clock edges. CKE must remain at the valid input level the entire time it  
takes to achieve the tCKEmin clocks of registeration. Thus, after any CKE transition, CKE may not transition from its valid level during the time period  
of tIS + tCKEmin + tIH.  
7. DESELECT and NOP are defined in the Command truth table  
8. On Self Refresh Exit DESELECT or NOP commands must be issued on every clock edge occurring during the tXS period. Read or ODT commands  
may be issued only after tXSDLL is satisfied.  
9. Self Refresh mode can only be entered from the All Banks Idle state.  
10. Must be a legal command as defined in the Command Truth Table.  
11. Valid commands for Power Down Entry and Exit are NOP and DESELECT only.  
12. Valid commands for Self Refresh Exit are NOP and DESELECT only.  
13. Self Refresh can not be entered while Read or Write operations. See ‘Self-Refresh Operation” and ‘Power-Down Modes” on  
detailed list of restrictions.  
later section for a  
14. The Power Down does not perform any refresh operations.  
15. “X” means “don’t care (including floating around VREF)” in Self Refresh and Power Down. It also applies to Address pins  
16. VREF (Both VREFDQ and VREFCA) must be maintained during Self Refresh operation.  
17. If all banks are closed at the conclusion of the read, write or precharge command, then Precharge Power Down is entered, otherwise Active Power  
Down is entered  
18. ‘Idle state’ means that all banks are closed(tRP,tDAL,etc. satisfied) and CKE is high and all timings from previous operations are satisfied  
(tMRD,tMOD,tRFC,tZQinit,tZQoper,tZQCS,etc)as well as all SRF exit and Power Down exit parameters are satisfied (tXS,tXP,tXPDLL,etc)  
AMS73CAG01808RA Rev. 1.0 December 2010  
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