℃
ELECTRICAL CHARACTERISTICS ( Ta = 25 unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max
Unit
Static
DrainꢀSource Breakdown
Voltage
V(BR)DSS
VGS(th)
IGSS
VGS=0V,ID=ꢀ250uA
VDS=VGS,ID=250uA
30
V
V
Gate Threshold Voltage
0.8
1.6
±
±
100
VDS=0V,VGS= 12V
Gate Leakage Current
nA
VDS=24V,VGS=0V
VDS=24V,VGS=0V
1
Zero Gate Voltage Drain
Current
IDSS
uA
A
10
℃
TJ=55
≧
OnꢀState Drain Current
ID(on)
VDS 4.5V,VGS=4.5V
4
VGS=10V,ID=2.8A
VGS=4.5V,ID=4.5A
VGS=2.5V,ID=1.5A
48
53
80
Ω
m
Drainꢀsource OnꢀResistance
RDS(on)
Forward Transconductance
Diode Forward Voltage
Dynamic
gfs
VDS=4.5V,ID=5.8A
IS=1.25A,VGS=0V
12
S
VSD
0.8 1.2
V
Total Gate Charge
GateꢀSource Charge
GateꢀDrain Charge
Qg
Qgs
Qgd
4.2
0.6
1.5
6
VDS=15V
VGS=4.5V
ID 2.0A
nC
pF
≡
Input Capacitance
Output Capacitance
Ciss
Coss
Crss
350
55
VDS=15V
VGS=0V
F=1MHz
Reverse Transfer Capacitance
41
2.5
2.5
20
4
VDD=15V
td(on)
TurnꢀOn Time
TurnꢀOff Time
Ω
RL=10
tr
ID=1.0A
nS
VGEN=10V
td(off)
tf
Ω
RG=3
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