AMS3406
DESCRIPTION
AMS3406
is the N-Channel logic enhancement mode power field effect transistor which is
produced using high cell density, DMOS trench technology. This high density process is
especially tailored to minimize on-state resistance. These devices are particularly
suited for low voltage application such as cellular phone and notebook computer power
management, other battery powered circuits, and low in-line power loss are required.
The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
FEATURE
30V/5.4A, R
DS(ON)
= 26m (Typ.)
@V
GS
= 10V
30V/4.6A, R
DS(ON)
= 36m
@V
GS
= 4.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23-3L package design
3
D
G
1
1.Gate
2.Source
S
2
3.Drain
PART MARKING
SOT-23-3L
3
A6YA
1
Y: Year Code
2
A: Week Code
1
Advanced Monolithic Systems
http://www.ams-semitech.com
AMS [ Advanced Monolithic Systems Ltd ]
