AMS3407S23RG
DESCRIPTION
AMS3407S23RG
is the P-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
FEATURE
-30V/-4.0A, R
DS(ON)
= 45m (Typ.)
@V
GS
= -10V
-30V/-3.2A, R
DS(ON)
= 65m
@V
GS
= -4.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and
maximum DC current capability
SOT-23-3L package design
3
D
G
1
S
2
1.Gate
2.Source
3.Drain
PART MARKING
SOT-23-3L
3
A7YA
1
Y: Year Code
2
A: Process Code
1
Advanced Monolithic Systems
http://www.ams-semitech.com
AMS [ Advanced Monolithic Systems Ltd ]
