TYPICAL CHARACTERISTICS
On-Resistance Varisation with Gate
Voltage and Drain Current
On-Resistance Characteristics
2
3
9.0V
VGS=10V
8.0V
VGS
=4.0V
4.5V
5.0V
7.0V
2.5
1.5
6.0V
6.0V
2
7.0V
8.0V
9.0V
1
0.5
0
5.0V
1.5
1
10V
4.0V
3.0V
0.5
1.2
Drain Current, ID (A)
2
1.6
0
0.4
0.8
2
3
4
5
0
1
Drain-Source Voltage, VDS(V)
On-Resistance Varisation with Drain
Current and Temperature
On-Resistance Varisation with Temperature
3
2
VGS=10V
VGS=10V
ID=500mA
2.5
1.75
1.5
125℃
25℃
TJ =
2
1.25
1
1.5
1
0.5
0
0.75
0.5
-
-
25
0
25
150
0
0.4
1.2
1.6
2
50
50
75 100 125
0.8
Drain Current,ID (A)
Junction Temperature, TJ (°C)
Gate Threshold Varisation with Temperature
Transfer Characteristics
1.1
2
VGS = VDS
ID = 1mA
VDS=10V
25℃
125℃
1.05
1
1.6
8
1.
0.95
0.9
1.2
0.85
0.8
0. 4
0
6
10
25
50
0
2
4
8
-25
0
75 100 125 150
-50
Gate to Source Voltage, VGS (V)
Junction Temperature, TJ (°C)
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AMS [ Advanced Monolithic Systems Ltd ]
