℃
ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
DrainꢀSource Breakdown
Voltage
V(BR)DSS
VGS(th)
IGSS
VGS=0V,ID=ꢀ250uA
VDS=VGS,ID=250uA
20
V
V
Gate Threshold Voltage
0.4
1.0
±
±
100
VDS=0V,VGS= 12V
Gate Leakage Current
nA
VDS=20V,VGS=0V
VDS=20V,VGS=0V
1
Zero Gate Voltage Drain
Current
IDSS
uA
10
℃
TJ=55
VGS=4.5V,ID=3.6A
VGS=2.5V,ID=3.1A
0.070
0.095
Ω
Drainꢀsource OnꢀResistance
RDS(on)
gfs
Forward Transconductance
Diode Forward Voltage
Dynamic
VDS=5V,ID=3.6V
IS=1.6A,VGS=0V
10
S
V
VSD
0.85 1.2
Total Gate Charge
GateꢀSource Charge
GateꢀDrain Charge
Qg
Qgs
Qgd
5.4
0.65
1.4
10
VDS=10V
VGS=4.5V
ID 3.6A
nC
pF
≡
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Ciss
Coss
340
115
VDS=10V
VGS=0V
F=1MHz
Crss
33
12
25
VDD=10V
td(on)
TurnꢀOn Time
TurnꢀOff Time
Ω
tr
RL=5.5
ID=3.6A
GEN=4.5V
36
34
10
60
60
25
nS
V
td(off)
tf
Ω
RG=6
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