AMS2319
DESCRIPTION
AMS2319
is the P-Channel logic enhancement mode power field effect transistor is
produced using high cell density, DMOS trench technology. This high density process
is especially tailored to minimize on-state resistance. These devices are particularly
suited for low voltage application such as cellular phone and notebook computer
power management and other battery powered circuits where high-side switching and
low in-line power loss are required in a very small outline surface mount package.
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PIN CONFIGURATION
SOT-23
FEATURE
-40V/-3.5A, R
DS(ON)
= 75m (Typ.)
@VGS = -10V
-40V/-2.8A, R
DS(ON)
= 105m
@VGS = -4.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23 package design
3.Drain
3
D
G
1
1.Gate
2.Source
S
2
PART MARKING
SOT-23
3
19YW
1
Y: Year Code
2
W: Week Code
1
Advanced Monolithic Systems
http://www.ams-semitech.com
AMS [ Advanced Monolithic Systems Ltd ]
