A29010B Series
Timing Waveforms for Alternate
Controlled Write Operation
CE
PA for program
SA for sector erase
555 for chip erase
555 for program
2AA for erase
Data Polling
PA
Addresses
tWC
tAS
tAH
tWH
WE
tGHEL
OE
CE
tWHWH1 or 2
t
CP
tBUSY
tCPH
t
WS
tDS
tDH
Data
DOUT
I/O7
tRH
A0 for program
55 for erase
PD for program
30 for sector erase
10 for chip erase
Note :
1. PA = Program Address, PD = Program Data, SA = Sector Address, I/O
7
= Complement of Data Input, DOUT = Array Data.
2. Figure indicates the last two bus cycles of the command sequence.
Erase and Programming Performance
Parameter
Sector Erase Time
Typ. (Note 1)
Max. (Note 2)
Unit
Comments
0.3
1
1.5
4
sec
sec
μs
Excludes 00h programming prior to
erasure (Note 4)
Chip Erase Time
Byte Programming Time
Chip Programming Time (Note 3)
Notes:
6
100
4
Excludes system-level overhead (Note 5)
1
sec
1. Typical program and erase times assume the following conditions: 25°C, 5.0V VCC, 10,000 cycles. Additionally, programming
typically assumes checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 4.5V (4.75V for -55), 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program
faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then does the device
set I/O5 = 1. See the section on I/O5 for further information.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 4 for
further information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 100,000 cycles.
PRELIMINARY (June, 2016, Version 0.0)
22
AMIC Technology, Corp.
AMICC [ AMIC TECHNOLOGY ]
