A25L016 Series
16Mbit Low Voltage, Serial Flash Memory
With 100MHz Uniform 4KB Sectors
Document Title
16Mbit, Low Voltage, Serial Flash Memory With 100MHz Uniform 4KB Sectors
Revision History
Rev. No.
1.0
1.1
History
Initial issue
Add the spec. of I
CC3
for 100MHz
Modify the I
CC1
and I
CC2
to 25μA
Modify the I
CC7
to 25mA
Modify the t
PP
to 3ms
Modify the t
SE
to 0.2s
Issue Date
April 2, 2008
December 26, 2008
Remark
Final
1.2
Modify the Sector Erase Time to 0.2s (typical)
Modify the Page Program Time to 2ms (typical)
Modify the Active Read Current to 35mA (Max.)
Modify the Program/Erase Current to 25mA (Max.)
Modify the Standby Current to 25μA (Max.)
Modify Block Erase Cycle Time to 1.3s (Max.)
Modify Chip Erase Cycle Time to 40s (Max.)
April 9, 2009
1.3
1.4
1.5
1.6
1.7
1.8
1.9
Add packing description in Part Numbering Scheme
P30: Change D
ata Retention and Endurance value from Max.
to Min.
Add 8-pin WSON (6*5mm) package type
Change t
W
, t
SE
, t
BE
and t
CE
values
P1: Add “Provide 64Bytes Security ID (application note is available
by request)” in Features
Add 8-pin SOP (150mil) package type
Change t
SE
(typ.) from 0.15s to 0.08s
Change t
SE
(max.) from 0.28s to 0.2s
Change t
BE
(typ,) from 0.7s to 0.5s
April 23, 2010
October 27, 2010
December 21, 2010
August 19, 2011
September 20, 2011
October 11, 2011
November 15, 2011
2.0
P31: Change I
CC6
(max.) from 15mA to 25mA
March 29, 2012
(March, 2012, Version 2.0)
AMIC Technology Corp.